由 J Robertson 著作 · 被引用 728 次 — first process follows the standard process flow, but with a metal gate replacing the poly-Si gate. ... gate first and gate last (replacement gate, dummy gate) ...
The implantation or diffusion of source and drain dopant impurities is carried out with the gate in place, leading to a channel perfectly aligned to the gate ...
This thesis examines possible metal gate materials for improving the performance of the gate stack and discusses process integration as well as improved ...
由 YC Yeo 著作 · 2004 · 被引用 109 次 — The most straightforward method of introducing two metals in a CMOS-integrated circuit is the dual metal gate process, which was employed in the first ...
2005年3月10日 — In a replacement gate fabrication approach, a polysilicon gate is formed over an etch stop layer in contact with a single-crystal semiconductor ...
由 PL Shah 著作 · 1979 · 被引用 77 次 — A process was developed for fabrication of NMOS devices using electron-beam direct writing, refractory metal gates and interconnects. Evaporated as well as ...
由 S Ji 著作 · 2020 · 被引用 1 次 — This process need etching process in different structures and lines wide, different material composition of all patterns to achieve the same standard, which ...
由 E Erben 著作 · 2018 · 被引用 6 次 — The metal gate for NMOS transistors requires a work function close to the conduction band of Si (∼4.1 eV) and the PMOS transistor needs a metal gate with a ...
